Our Services
We provide personalised support and expert guidance to all our users, no matter your experience level. We strive to ensure that our users’ needs are met at every stage of their research by providing tailored solutions and excellent customer service. We offer a wide range of Silicon Photonics platforms all available via scheduled multi-project-wafer runs or bespoke fabrication batches available on-demand.
Multi-project-wafer (MPW) service on a variety of platforms
220 nm silicon-on-insulator (passive devices / active devices)
Our team has an exemplary track record in silicon-based modulators having demonstrated several world firsts, including the first 1 Gb/s carrier depletion modulator in 2004, now the industry standard, and the first 50 Gb/s carrier depletion modulator in 2012. In 2020, we demonstrated a fully integrated silicon MZI modulator with CMOS driver operating at 100 Gb/s OOK.
| Technology details |
Si etch depths: 70 nm, 120 nm & 220 nm TiN based thermal phase shifters 4 implantation layers for active device batches High resistivity handle wafer for improved RF performance (750 ohm.cm) |
| Performance (TE single mode @ λ = 1.55 µm): |
Rib waveguide propagation loss: < 3 dB/cm
|
| Logistics | Design area options: 11.47 x 4.9 mm² / 5.5 x 4.9 mm² Delivery timeframe: < 3 months |
340 nm silicon-on-insulator (passive devices)
Our flexibility enables users to add customised steps into all of our MPW batches. For example, in this platform a user could add e-beam written apodised grating couplers capable of coupling efficiencies of < 1 dB. A user could also add customised etch depths or sensing windows in the top cladding layer.
| Technology details |
Si etch depths: 140 nm & 340 nm |
| Performance (TE single mode @ λ = 1.55 µm): |
Rib waveguide propagation loss: < 0.8 dB/cm |
| Logistics |
Design area options: 11.47 x 4.9 mm² / 5.5 x 4.9 mm² |
500 nm silicon-on-insulator (passive devices)
All of our platforms are supported by an open source process design kit (PDK), which is available to download in GDSII format via our website or is accessible via Luceda Photonics’ IPKISS software.
| Technology details |
Si etch depths: 160 nm & 300 nm |
| Performance (TE single mode @ λ = 1.55 µm): |
Rib waveguide propagation loss: < 3 dB/cm |
| Logistics |
Design area options: 11.47 x 4.9 mm² / 5.5 x 4.9 mm² |
Silicon nitride
The SiN platform extends the available operating wavelengths of CORNERSTONE’s portfolio into the visible range. This is of particular interest for quantum photonics technologies. The lower refractive index of SiN also makes it less susceptible to fabrication tolerances and temperature fluctuations relative to Si.
| Technology details |
Platform: 300 nm SiN / 3 μm BOX |
| Performance (TE single mode @ λ = 1.55 µm): |
Strip waveguide propagation loss: < 0.5 dB/cm |
| Logistics |
Design area: 11.47 x 15.45 mm² |
Suspended-silicon
The SOI BOX layer becomes highly absorbing at wavelengths above ~3.8 μm. CORNERSTONE’s suspended-Si platform alleviates this problem by locally removing the BOX layer underneath suspended waveguides to extend the transparency of the SOI platform up to ~8 μm.
| Technology details |
Platform: 500 nm Si / 3 μm BOX |
| Performance (TE single mode @ λ = 3.8 µm): |
Waveguide propagation loss: < 3 dB/cm |
| Logistics |
Design area options: 11.47 x 4.9 mm² / 5.5 x 4.9 mm² |
Germanium – on – silicon
The Ge-on-Si platform supports wavelengths up to ~14 μm, which makes it well suited for a broad variety of applications including environmental, biological, chemical and pharmaceutical sensing, industrial process control, toxin and contaminant detection, point-of care diagnostics and astrophysics.
| Technology details |
Platform: 3 μm Ge-on-Si (n-type) |
| Performance (TE single mode): |
Waveguide propagation loss: < 3 dB/cm @ λ = 6.0μm, < 8.5 dB/cm @ λ = 9.9 μm |
| Logistics |
Design area: 11.47 x 15.45 mm² |
Bespoke fabrication batches with a tape-out date to suit your requirements
Electronic-photonic integration via flip-chip bonding
Design consultancy
Training courses including the chance to spend a day in our cleanrooms
Lithography
We offer an affordable and efficient deep-UV projection lithography service for 8” (200 mm) Si based substrates. Our deep-UV lithography service is capable of patterning 200 nm features, with a maximum design area of 24 mm x 32 mm.
We offer 3 different resist thicknesses, all using a positive tone resist (exposed areas are developed): 680 nm, 1 µm, 1.3 µm.
Check out the lithography process in action:
How to access our Lithography Service
Please download the design rules. If you would like to proceed, you will need complete our form to order a reticle and when you are ready to submit a job, you can do so via the DUV job submission form.
Get in touch
If you would like to discuss any of our services, then please do not hesitate to contact us.