SOI 220 nm active and passive platforms

The platform features a 220 nm thick silicon device layer on a 2 µm buried oxide layer and is accessible through MPW and bespoke fabrication runs.  Available in both active (with dopant implantation) and passive (with integrated heaters) runs, it enables the design of high-speed modulators. Our team has an exceptional track record in silicon-based modulator innovation — delivering multiple world firsts, including the first 1 Gb/s carrier-depletion modulator in 2004 (now the industry standard), the first 50 Gb/s carrier-depletion modulator in 2012, and, in 2020, a fully integrated silicon MZI modulator with CMOS driver operating at 100 Gb/s OOK.